- 您现在的位置：买卖IC网 > Sheet目录490 > NTLUS3A40PZTBG (ON Semiconductor)T4 20/8 PCH 2X2 UDFN SING
NTLUS3A40PZ
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
Symbol
R θJA
R θJA
R θJA
Max
72
33
189
Units
° C/W
ELECTRICAL CHARACTERISTIC S (T J = 25 ° C unles s otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ? 250 m A
I D = ? 250 m A, ref to 25 ° C
? 20
? 5.0
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 20 V
T J = 25 ° C
T J = 85 ° C
? 1.0
? 10
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 10
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ? 250 m A
? 0.4
3.0
? 1.0
V
mV/ ° C
Drain-to-Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 6.4 A
23
29
m W
V GS = ? 2.5 V, I D = ? 4.8 A
V GS = ? 1.8 V, I D = ? 2.5 A
V GS = ? 1.5 V, I D = ? 1.5 A
31
43
60
39
60
120
Forward Transconductance
g FS
V DS = ? 15 V, I D = ? 4.0 A
18
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1 MHz,
V DS = ? 15 V
V GS = ? 4.5 V, V DS = ? 15 V;
I D = ? 4.0 A
2600
200
190
29
1.4
3.7
8.1
pF
nC
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
t d(ON)
9.0
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DD = ? 15 V,
I D = ? 4.0 A, R G = 1 W
18
126
71
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
V GS = 0 V,
I S = ? 1.0 A
T J = 25 ° C
T J = 125 ° C
0.65
0.55
1.0
V
Reverse Recovery Time
t RR
25
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, dis/dt = 100 A/ m s,
I S = ? 1.0 A
10
15
Reverse Recovery Charge
Q RR
13.6
nC
3.
4.
5.
6.
Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm 2 , 2 oz. Cu.
Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
NTLUS3A90PZTBG
POWER MOSFET 20V 3A 60 MO UDFN6
NTLUS4195PZTBG
MOSFET P-CH 30V 3A SGL 6UDFN
NTMD2C02R2SG
MOSFET N/P-CH COMPL 20V 8-SOIC
NTMD2P01R2G
MOSFET PWR P-CHAN DUAL 16V 8SOIC
NTMD4184PFR2G
MOSFET P-CH 30V 2.3A 8-SOIC
NTMD4820NR2G
MOSFET N-CH DUAL 30V 4.9A 8-SOIC
NTMD4840NR2G
MOSFET N-CH DUAL 30V 4.5A 8-SOIC
NTMD4884NFR2G
MOSFET N-CH 30V 3.3A 8-SOIC
相关代理商/技术参数
NTLUS3A90PZ
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:a??20 V, a??5.0 A, Cool Single Pa??Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A90PZTAG
功能描述:IGBT 晶体管 POWER MOSFET 20V 3A 60 MO RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
NTLUS3A90PZTBG
功能描述:IGBT 晶体管 POWER MOSFET 20V 3A 60 MO
RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube
NTLUS4195PZ
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −30 V, −4.0 A, Cool Single P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS4195PZTAG
功能描述:MOSFET NFET UDFN6 30V 3A 95 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLUS4195PZTBG
功能描述:MOSFET NFET UDFN6 30V 3A 95 mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLUS4930N
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 6.1 A, Single Na??Channel, 2.0x2.0x0.55 mm Cool UDFN6 Package
NTLUS4930NTAG
制造商:ON Semiconductor 功能描述:NFET UDFN6 30V 6.3A 26.3M - Tape and Reel 制造商:ON Semiconductor 功能描述:30V,6.3A,N-Channel power MOSFET